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  • Green Gas for Grid - g3 - SF6 Free Solutions

    SF 6 SF6 (or Sulphur Hexafluoride) had been the standard gas used inside high voltage electrical equipment as an insulating and arc-quenching medium. However, SF 6 SF6 is also listed as an extremely potent greenhouse gas according to the Kyoto protocol, with 23,500 times the comparative Global Warming Potential of CO 2 and a lifetime of 3,200 years in the atmosphere.What is GE’s g3?g³, (pronounced g cubed) is GEs game-changing alternative to SF6 gas, developed for HV electrical transmission equipment.Is there an alternative gas to SF6 for HV equipment?Yes, there is GE’s green gas for grids, g3 pronounced gcubed that is GEs game-changing alternative to SF6 gas, developed for HV electrical transmi...Can I replace SF6 by g3 in existing HV equipment?Direct retrofit is not possible. However, retrofits could be possible in some specific cases, though not with strictly identical performance or ope...Is GE’s g3 gas dangerous or toxic?GE’s g3 green gas is an inorganic, colorless, odorless, non- flammable, non-toxic gas, exactly like SF6.Does GE have SF6-free switchgear?GE’s manufactures g3 high voltage products as an alternative to SF6. These products are type-tested and available for live-tank circuit breakers an...

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  • SimulationsofSiandSiO EtchinginSF +O Plasma

    SimulationsofSiandSiO2 EtchinginSF6+O2 Plasma 481 with SF5 radicals (Eq. (1.3)). At 27% O2, the concen- tration of F atoms approaches the maximum value. At this point, almost all SF5 radicals in SF6 + O2 plasma have reacted. Subsequently, the concentration starts toCited by: 12

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  • Chemistry studies of SF6/CF4, SF6/O2 and CF4/O2 gas phase

    In this work, mass spectrometry and optical emission spectroscopy techniques were used to monitor the molecular and atomic neutral species during SF 6 /CF 4, SF 6 /O 2 and CF 4 /O 2 plasmas generated in a radio-frequency Hollow Cathode Reactive Ion Etching (HCRIE) reactor keeping constant the following operational conditions: total gas flow rate, gas pressure, and discharge power.Cited by: 11

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  • Temperature influence on etching deep holes with SF6/O2

    A cryogenic SF6/O2 plasma process has been used to investigate the etching of deep holes in silicon wafers. The influence of crystallographic and aspect ratio dependence of the etch rate on the...

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  • Oxidation of sulfur hexafluoride - ScienceDirect

    The SF6-O2 equilibrium was computed in the temperature range 1000-6000 from thermochemical data in [10], augmented by SOF4 data developed by Dr. R. Wilkins. The equilibrium data were calculated for pressures similar to our initial reactant conditions. Undoubtedly pressure transients occurred inCited by: 7

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  • Solved: 26) Which Of The Following Samples Has - Chegg.com

    a) o2 b) sf6 c) xe d) co2 Question: 26) Which Of The Following Samples Has The Greatest Density At STP? A) O2 B) SF6 C) Xe D) CO2 E) All Of These Samples Have The Same Density At STP.Solved: La A Moving To Another Question Will Save This ResSolved: A Mixture Of Two Gases Was Allowed To Effuse FromSolved: 1) In Which One Of The Following Species Is The CeSee more results

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  • Byproducts of Sulfur Hexafluoride (SF6) Use in the

    Byproducts of Sulfur Hexafluoride (SF 6) Use in the Electric Power Industry Prepared for U.S. Environmental Protection Agency Office of Air and Radiation

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  • EU Report Highlights Sulphur Hexafluoride Countdown

    In HV, a 170kV gas insulated switchgear (GIS) based Novec 5110 mixture with CO2 and O2 was the first SF6 alternative installed in a HV GIS, located in Zurich in 2015.

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  • Did anyone have experience in etching SiO2 with SF6 in ICP

    The gasese we have are: SF6(0-100sccm), O2(0-20sccm), Ar(0-5sccm), and C4F8. my sample is 3um SiO2 deposited on the surface of Si wafer. The recipe I designed for 3um SiO2 etching is:

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  • SF Solutions – Just another WordPress site

    The owner of SF6 SOLUTIONS, Johan Meyer, has been the drive behind establishing the DILO and TY-FLOT agencies in Southern African markets for close to 10 years. As the agencies grew and went from strength to strength it became necessary to part with the previous company as the scope of products supplied was to vast.

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  • Sulfur Hexafluoride - The gas with a double-edged sword

    About gasworld. Month on month, the gasworld website is the market-leading news portal for the global industrial gas sector, growing at an unprecedented rate and keeping its readers at the forefront of breaking news, insightful analysis and must-see features across the industry.Launched in 2004 and continually evolving, it is the only independent online news, views and intelligence portal for

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  • SOLUBILITY AND ENTROPY OF SOLUTION OF He, N2, A, O2, CH4

    Oxygen and Ozone in Water, Aqueous Solutions, and Organic Liquids (Supplement to Solubility Data Series Volume 7). Journal of Physical and Chemical Reference Data 2014 , 43 (3) , 033102.

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  • Study on Pyrolysis Characteristics of SF6 in a Trace

    To check results of others on the rate of decompn. of SF6 at high temps. and study its susceptibility to attack by O2 and O, kinetic data on SF6, SF6-O3, and SF6-O2 mixts., all Ar-dild., at 1600-2200&K behind incident shocks were obtained in a 1.5 in. diam. stainless

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  • I am looking for a recipe for anisotropic silicon etch

    The available gases are CHF3, SF6, O2, Ar. So, I am looking for a recipe for good anisotropic etch at this scale. I will really appreciate any suggestion or recommendation to relevant literature.

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  • STS ASE ICP DRIE – Fluorine | Core Facilities

    The STS ASE ICP DRIE – Fluorine is a load locked, inductively coupled plasma etch system. Process gases are SF6, C4F8, O2 and Ar. The system is for deep silicon etching using the Bosch process. Masks allowed in this system are photoresist and SiO2. This tool requires pre-requisite training on other techniques: Super User AND PlasmaLab M80 Plus – Fluorine OR Super User AND PlasmaLab M80

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